Computer-aided study of hot wall epitaxy system using a Monte-Carlo technique
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9) , 5385-5393
- https://doi.org/10.1063/1.332718
Abstract
Theoretical analysis of PbTe molecular flow in hot wall epitaxy system has been made using a Monte-Carlo approach for free molecular flow. Variation in transmission probabilities with the dimensions of the wall have been obtained. These results are applied to get epitaxial growth conditions for PbTe on KCl substrates. It has been observed that at condensation energy Ec=1.6 eV, the substrate temperature range obtained using the present analysis agrees well with the experimental observations.This publication has 13 references indexed in Scilit:
- Three-temperature method as an origin of molecular beam epitaxyThin Solid Films, 1982
- PbTe-Pb1−xSnxTe superlattices prepared by a hot wall techniqueJournal of Applied Physics, 1980
- Hot wall epitaxyThin Solid Films, 1978
- Growth of PbTe films under near-equilibrium conditionsJournal of Applied Physics, 1977
- PbTe and Pb0.8Sn0.2Te epitaxial films on cleaved BaF2 substrates prepared by a modified hot-wall techniqueJournal of Applied Physics, 1976
- Quasi-static growth of PbS epitaxic filmsThin Solid Films, 1972
- Epitaxial growth of AIIBVI type compounds under quasi-equilibrium conditionsThin Solid Films, 1972
- Thick Epitaxial Films of Pb1−xSnxTeJournal of Vacuum Science and Technology, 1972
- Vacuum deposition of epitaxial ZnSe on GaAsThin Solid Films, 1971
- Epitaxial Growth of Lead Tin TellurideJournal of Applied Physics, 1970