SiC device edge termination using finite area argon implantation
- 1 June 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (6) , 1013-1017
- https://doi.org/10.1109/16.585559
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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