Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
- 1 March 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (3) , 139-141
- https://doi.org/10.1109/55.485193
Abstract
Edge-terminated high-voltage Ti/4H-SiC Schottky rectifiers were successfully fabricated by using highly resistive layers at the periphery of Schottky contacts. The highly resistive layers were formed by B/sup +/ implantation followed by a heat treatment to improve the crystallinity of implanted layers. Utilizing these layers for the edge termination of 4H-SiC Schottky rectifiers, the reverse blocking characteristics were significantly improved in comparison with the rectifiers without edge termination, and a high-blocking voltage over 1100 V (the maximum: 1750 V) was achieved. The temperature dependence of the reverse-blocking characteristics was investigated, and high temperature operation even at 150/spl deg/C was demonstrated with a blocking voltage over 1100 V.Keywords
This publication has 15 references indexed in Scilit:
- High voltage 4H-SiC Schottky barrier diodesIEEE Electron Device Letters, 1995
- High performance of high-voltage 4H-SiC Schottky barrier diodesIEEE Electron Device Letters, 1995
- Semiconductor Silicon Carbide for Power Electronic ApplicationPublished by Japan Society of Applied Physics ,1995
- 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHzIEEE Electron Device Letters, 1994
- A simple edge termination for silicon carbide devices with nearly ideal breakdown voltageIEEE Electron Device Letters, 1994
- High-quality 4H-SiC homoepitaxial layers grown by step-controlled epitaxyApplied Physics Letters, 1994
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Power semiconductor devices for variable-frequency drivesProceedings of the IEEE, 1994
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Electron Mobility Measurements in SiC PolytypesJournal of Applied Physics, 1967