Conductivity Anisotropy in Epitaxial 6H and 4H Sic
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A measure of the electron mobility anisotropy in n-type 4H and 6H-SiC has been obtained using the Hall effect over the temperature range 80K17-1018 cm-3. The observed mobility ratio for 4H is μ[1120]/[0001] and is independent of temperature. For 6H, the ratio μ[1100]/[0001] decreases from ∼6.2 at 80K to ∼5.0 at 150K and is essentially constant (∼4.8) above 200K. A donor level near 0.6 eV is occasionally observed in 4H which reduces the high temperature electron mobility and introduces an apparent temperature dependence to the mobility ratio if nonuniformly distributed.Keywords
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