High voltage 4H-SiC Schottky barrier diodes

1 June 1995

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 16 (6) , 226-227
https://doi.org/10.1109/55.790716

Abstract

Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages up to 1000 V are reported for the first time. The diodes showed excellent forward I-V characteristics, with a forward voltage drop of 1.06 V at an on-state current density of 100 A/cm/sup 2/. The specific on-resistance for these diodes was found to be low (2/spl times/10/sup -3/ /spl Omega/-cm/sup 2/ at room temperature) and showed a T/sup 1.6/ variation with temperature. Titanium Schottky barrier height was determined to be 0.99 eV independent of the temperature. The breakdown voltage of the diodes was found to decrease with temperature.

Keywords

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