Theory of Recombination Processes in Semiconductors through Multielectron Centers with Many Excited States
- 1 February 1963
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 18 (2) , 207-223
- https://doi.org/10.1143/jpsj.18.207
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Effect of Excited Multielectron Centers on the Recombination Processes in SemiconductorsJournal of the Physics Society Japan, 1962
- Recombination of Electrons and Donors in-Type Germanium. BPhysical Review B, 1962
- Giant trapsJournal of Physics and Chemistry of Solids, 1959
- Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge ConditionsPhysical Review B, 1958
- Recombination of Excess Carriers in SemiconductorsJournal of the Physics Society Japan, 1957
- On the theory of the thermal capture of electrons in semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- Statistics of the Charge Distribution for a Localized Flaw in a SemiconductorPhysical Review B, 1957
- Thermal capture of electrons in siliconAnnals of Physics, 1957
- A Contribution to the Recombination Statistics of Excess Carriers in SemiconductorsProceedings of the Physical Society. Section B, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952