Thermal capture of electrons in silicon
- 1 July 1957
- journal article
- Published by Elsevier in Annals of Physics
- Vol. 2 (1) , 28-56
- https://doi.org/10.1016/0003-4916(57)90034-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Broadening of Impurity Levels in SiliconPhysical Review B, 1955
- Optical and Impact Recombination in Impurity Photoconductivity in Germanium and SiliconPhysical Review B, 1955
- Theory of Donor States in SiliconPhysical Review B, 1955
- Thermal Ionization and Capture of Electrons Trapped in SemiconductorsPhysical Review B, 1955
- Application of the Method of Generating Function to Radiative and Non-Radiative Transitions of a Trapped Electron in a CrystalProgress of Theoretical Physics, 1955
- Ground State of Impurity Atoms in Semiconductors Having Anisotropic Energy SurfacesPhysical Review B, 1955
- Absorption of Light by Trapped ElectronsPhysical Review B, 1953
- The Franck-Condon Principle and Its Application to CrystalsThe Journal of Chemical Physics, 1952
- Thermal Ionization of Trapped ElectronsPhysical Review B, 1952