Electrical characteristics of Cu-Cu2O diodes fabricated by anodic oxidation
- 14 October 1988
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 21 (10) , 1516-1518
- https://doi.org/10.1088/0022-3727/21/10/009
Abstract
The anodic oxidation of copper in a copper sulphate bath has been performed. From gravimetric measurements of the thickness of the cuprous oxide layer formed, it is observed that the growth law for anodic oxide thin film formation is a power law. The cuprous oxide diodes fabricated by the above technique have been studied using current-voltage and capacitance-voltage methods. From these it is inferred that the resulting device is characteristic of a metal-insulator-semiconductor (MIS) diode.Keywords
This publication has 13 references indexed in Scilit:
- Large barrier tunnel metal-insulator-semiconductor structuresSemiconductor Science and Technology, 1987
- Preparation and properties of Cu2O/Cu photovoltaic cellsSolar Energy Materials, 1984
- The electrical characteristics of degenerate InP Schottky diodes with an interfacial layerJournal of Applied Physics, 1982
- Thin-film Cu2O/Cu photovoltaic cellsCanadian Journal of Physics, 1982
- Photovoltaic effects in Cu2OCu solar cells grown by anodic oxidationSolid-State Electronics, 1982
- Photovoltaic effect in cuprous oxide-copper junctions in relation to the optical absorption spectrum of cuprous oxideSolid State Communications, 1981
- Characteristics of metal-semiconductor contacts fabricated by the electroless deposition methodSolid-State Electronics, 1980
- Explanation for low-efficiency Cu2O Schottky-barrier solar cellsApplied Physics Letters, 1979
- Photovoltaic properties and barrier heights of single-crystal and polycrystalline Cu2O–Cu contactsJournal of Applied Physics, 1973
- Magnetoabsorption Oscillations and the Zeeman Effect of Excitons for Forbidden Interband Transitions inO CrystalsPhysical Review B, 1969