Chemisorption and decomposition of tris(dimethylamino) phosphine on GaAs(100)
- 1 October 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 339 (3) , 310-322
- https://doi.org/10.1016/0039-6028(95)00648-6
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Gas-Phase Decomposition Reactions of Tris(dimethylamino)phosphine, -Arsine, and -Stibine ReagentsChemistry of Materials, 1995
- Chemical/surface mechanistic considerations in the design of novel precursors for metalorganic molecular beam epitaxyJournal of Crystal Growth, 1994
- Adsorbed Phenyl Groups as Traps for Radical Intermediates in Reactions on Copper SurfacesLangmuir, 1994
- Reaction mechanisms governing the selected-area growth of III-V semiconductors by chemical beam epitaxySemiconductor Science and Technology, 1993
- Formation of methyl radicals during the oxidative addition of iodomethane to a single-crystal copper surfaceJournal of the American Chemical Society, 1993
- Mass Spectrometric Study and Modeling of Decomposition Process of Tris-Dimethylamino-Arsenic on (001) GaAs SurfaceJapanese Journal of Applied Physics, 1991
- Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100)Journal of Applied Physics, 1990
- Decomposition mechanisms of tertiarybutylarsineJournal of Crystal Growth, 1989
- Adducts in the growth of III–V compoundsJournal of Crystal Growth, 1984
- Mass spectral studies of some substituted phosphinesAnalytica Chimica Acta, 1969