Mass Spectrometric Study and Modeling of Decomposition Process of Tris-Dimethylamino-Arsenic on (001) GaAs Surface

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Abstract
Decomposition process of a new arsenic precursor, As[N(CH3)2]3, for metalorganic molecular beam epitaxy (MOMBE) was studied. It was found that a Ga-stabilized (4×2) GaAs surface turned to an As-stabilized (2×4) surface at a low substrate temperature of ∼400°C and with a low As[N(CH3)2]3 pressure of ∼10-7 Torr when it was supplied without thermal precracking. This is a marked contrast to conventional As[C2H5]3 with which the As-stabilized GaAs surface is never formed without precracking. The decomposition process was modeled assuming an intermediate-state species adsorbed on the GaAs surface based on a quadrupole mass spectrometric study. The measured temperature dependence was very well explained with the present model.