Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine

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Abstract
Thermally cracked tertiarybutylarsine and tertiarybutylphosphine were used to replace AsH3 and PH3 for the growth of Ga0.47In0.53As and InP by metalorganic molecular beam epitaxy. For both materials, carrier concentrations n=(1–2)×1015 cm−3 were obtained at 300 and 77 K, with 77 K mobilities of 29 000 and 31 000 cm2 V−1 s−1. The GaAs was p‐type with p=4×1015 cm−3 at both temperatures and a 77 K mobility of 2200 cm2 V−1 s−1. The lifetimes for carriers in 14–60 Å thick quantum wells were 3±1 ns. The reacting arsenic species for epitaxy were As2 and As4. The reacting phosphorus species were PH2 and possibly PH.