Alternative precursors for III–V MOVPE criteria for evaluation
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 281-289
- https://doi.org/10.1016/0022-0248(91)90472-h
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Alternative group V precursors for CVD applicationsJournal of Crystal Growth, 1991
- Coordinatively saturated Ga compounds — A new type of group III precursor for the MOCVD of GaAsJournal of Crystal Growth, 1990
- Spouses' Impressions of Rules for Communication in Public and Private Marital ConflictsJournal of Marriage and Family, 1989
- Organometallic Vapor Phase Epitaxy: Features, Problems, New ApproachesMRS Bulletin, 1988
- Non-hydride group V sources for OMVPEJournal of Electronic Materials, 1988
- The use of organic As precursors in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988
- Growth of high-quality GaAs using trimethylgallium and diethylarsineApplied Physics Letters, 1987
- On the role of Hydrogen in the MOCVD of GaAsJournal of Crystal Growth, 1986
- Kinetics of GaAs growth by low pressure MO-CVDJournal of Electronic Materials, 1984
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968