On the role of Hydrogen in the MOCVD of GaAs
- 17 August 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (2) , 305-310
- https://doi.org/10.1016/0022-0248(86)90375-1
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The role of CH4 in metal organic chemical vapour deposition of GaAsThin Solid Films, 1986
- Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2Journal of the Electrochemical Society, 1985
- Kinetics of GaAs growth by low pressure MO-CVDJournal of Electronic Materials, 1984
- Photostimulated growth of GaAs in the MOCVD systemJournal of Crystal Growth, 1984
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- Heteroepitaxial GaAs on Aluminum Oxide: Electrical Properties of Undoped FilmsJournal of Applied Physics, 1971