Photostimulated growth of GaAs in the MOCVD system
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 194-199
- https://doi.org/10.1016/0022-0248(84)90416-0
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- On the effect of carrier gas on growth conditions in MOCVD reactors; Raman study of local temperatureJournal of Crystal Growth, 1984
- Studies of GaAs and AlGaAs layers grown by OM-VPEJournal of Crystal Growth, 1981
- High purity GaAs prepared from trimethylgallium and arsineJournal of Crystal Growth, 1981
- Characterization of GaAs epitaxial layers grown in a radiation heated Mo-CVD reactorJournal of Electronic Materials, 1981
- Laser photodeposition of metal films with microscopic featuresApplied Physics Letters, 1979