Characterization of GaAs epitaxial layers grown in a radiation heated Mo-CVD reactor
- 1 May 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (3) , 473-480
- https://doi.org/10.1007/bf02654586
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Very low threshold Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Electron mobility in vapor-grown GaAs filmsJournal of Applied Physics, 1978