Residual impurities in high purity GaAs epitaxial layers grown by liquid phase epitaxy
- 1 September 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 71 (2) , 245-248
- https://doi.org/10.1016/0040-6090(80)90161-3
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Purity of GaAs grown by LPE in a graphite boatJournal of Crystal Growth, 1976
- Electrical characterization of epitaxial layersThin Solid Films, 1976
- Determination of Fermi-level effect on Si-site distribution in GaAs : SiJournal of Applied Physics, 1974
- Electrical and Optical Properties of n-Type Si-Compensated GaAs Prepared by Liquid-Phase EpitaxyJournal of Applied Physics, 1969
- Local Mode Absorption in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1966