Determination of Fermi-level effect on Si-site distribution in GaAs : Si
- 1 May 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (5) , 2254-2257
- https://doi.org/10.1063/1.1663572
Abstract
Silicon‐site distribution in GaAs under the influence of a second dopant was studied by measuring the Si localized vibrational modes and the carrier concentrations of a series of samples. Each sample had the same total Si concentration, [Si], but with different concentrations of a second dopant. Semiquantitative results give a relationship between [SiGa]/ [SiAs] and the concentration of the second dopant which is compared with a calculation based on the thermodynamically predicted Fermi‐level effect as formulated by Longini and Greene.This publication has 11 references indexed in Scilit:
- Effects of annealing on the carrier concentration of heavily Si-doped GaAsJournal of Applied Physics, 1973
- On the Infrared-Plasma-Reflection in p-Type GaAsPhysica Status Solidi (b), 1973
- Two‐Phonon Processes in Crystals of D SymmetryPhysica Status Solidi (b), 1973
- Investigation of Te-Doped GaAs Annealing Effects by Optical- and Channeling-Effect MeasurementsJournal of Applied Physics, 1971
- Temperature Dependence of the Energy Gap in GaAs and GaPJournal of Applied Physics, 1969
- Local-Mode Absorption and Defects in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1968
- SITE TRANSFER OF Si IN GaAsApplied Physics Letters, 1968
- Production of Polymer Gel with Least Radiation DoseJournal of the Physics Society Japan, 1966
- Studies on Group III-V Intermetallic CompoundsPhysical Review B, 1957
- Ionization Interaction between Impurities in Semiconductors and InsulatorsPhysical Review B, 1956