On the Infrared-Plasma-Reflection in p-Type GaAs
- 1 January 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 55 (1) , K69-K74
- https://doi.org/10.1002/pssb.2220550168
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Light and heavy hole masses in GaAs and GaSbJournal of Physics C: Solid State Physics, 1968
- Infrared Reflectivity of Heavily Doped Low-Mobility Semiconductors. I. GaAsJournal of Applied Physics, 1966
- INFRARED REFLECTION OF HEAVILY DOPED p-TYPE GALLIUM ARSENIDECanadian Journal of Physics, 1966
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957