Der einfluss der energieverteilung der ladungsträger in halbleitern auf die bestimmung ihrer effektiven masse aus der infrarot-plasma-reflexion
- 1 June 1969
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 29 (7) , 420-421
- https://doi.org/10.1016/0375-9601(69)90339-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Use of plasma edge reflection measurements in the study of semiconductorsJournal of Physics C: Solid State Physics, 1968
- Comparison of classical approximations to free carrier absorption in semiconductorsSolid-State Electronics, 1967
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957