Use of plasma edge reflection measurements in the study of semiconductors
- 1 October 1968
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 1 (5) , 1435-1446
- https://doi.org/10.1088/0022-3719/1/5/333
Abstract
Analysis of plasma edge reflectivity measurements can be extended to give more accurate determinations of carrier concentration or effective mass, and can also be used directly to obtain the scattering time and conductivity. Using suitable geometries the technique can be used to study buried layers such as p-n junction interfaces.Keywords
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