Ohmic contacts on selectively doped AlInAs/GaInAs heterostructures using Ni, AuGe and Au
- 31 December 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (12) , 1345-1349
- https://doi.org/10.1016/0038-1101(87)90062-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Investigation of orientation effect on contact resistance in selectively doped AlGaAs/GaAs heterostructuresApplied Physics Letters, 1986
- MOCVD growth of selectively doped AlInAs/GaInAs heterostructures and its application to HIFETs (heterointerface FETs)Electronics Letters, 1986
- Ohmic contacts to GaAsThin Solid Films, 1983