Reactive ion etching of deep trenches in silicon with CF2Cl2 and O2
- 31 December 1988
- Vol. 38 (11) , 1011-1014
- https://doi.org/10.1016/0042-207x(88)90565-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Structural Effects on a Submicron Trench ProcessJournal of the Electrochemical Society, 1985
- A trench-isolated submicrometer CMOS technologyIEEE Transactions on Electron Devices, 1985
- Reactive Ion Etching of Silicon with Cl2 / Ar ( 1 )Journal of the Electrochemical Society, 1983
- Anisotropic plasma etching of polysilicon using SF6 and CFCl3Journal of Vacuum Science & Technology A, 1983
- Summary Abstract: Trench isolation technology: Processing and implementationJournal of Vacuum Science & Technology A, 1983