Potential barrier at the NaClSi(111) interface
- 1 July 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 200 (2-3) , 454-456
- https://doi.org/10.1016/0039-6028(88)90551-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Graded Ila-fluoride buffer layers for heteroepitaxy of lead chalcogenides and CdTe on SiJournal of Crystal Growth, 1987
- Ca/Si(111): Thin-film characterization by high-resolution electron-energy-loss spectroscopyPhysical Review B, 1986
- Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111)Journal of Vacuum Science & Technology B, 1986
- Determination of Interface States for Ca/Si(111) from Near-Edge X-Ray-Absorption MeasurementsPhysical Review Letters, 1986
- Attenuation length of monoenergetic electrons photoinjected into the NaCl layerApplied Physics A, 1984
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982