Determination of Interface States for Ca/Si(111) from Near-Edge X-Ray-Absorption Measurements
- 7 April 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (14) , 1497-1500
- https://doi.org/10.1103/physrevlett.56.1497
Abstract
The technique of polarization-dependent near-edge x-ray absorption is applid to an interface by taking advantage of core-level and Auger energy shifts for interface atoms. For epitaxial Ca/Si(111) several unoccupied Ca- and F-derived interface states are found. The orientation of the corresponding orbitals is determined from the polarization dependence. The Ca atoms at the interface are found to be in the 1 + oxidation state.
Keywords
This publication has 22 references indexed in Scilit:
- Observation of a true interface state in strained-layer Cu adsorption on Ru(0001)Physical Review Letters, 1986
- Epitaxial growth and characterization of CaF2 on SiJournal of Applied Physics, 1985
- Real-space determination of atomic structure and bond relaxation at the-Si(111) interfacePhysical Review Letters, 1985
- Determination of Local Atomic Arrangements at Surfaces from Near-Edge X-Ray-Absorption Fine-Structure Studies: O on Ni(100)Physical Review Letters, 1983
- Direct structural study of Cl on Si {111} and Ge {111} surfaces: New conclusionsPhysical Review B, 1983
- Absorption-edge resonances, core-hole screening, and orientation of chemisorbed molecules: CO, NO, andon Ni(100)Physical Review B, 1982
- MBE-grown fluoride films: A new class of epitaxial dielectricsJournal of Vacuum Science and Technology, 1981
- Orientation of Chemisorbed Molecules from Surface-Absorption Fine-Structure Measurements: CO and NO on Ni(100)Physical Review Letters, 1981
- Electronic states and atomic structure at the Pd2Si–Si interfaceJournal of Vacuum Science and Technology, 1981
- Evidence for a Surface-State Exciton on GaAs(110)Physical Review Letters, 1975