Reduction of fast interface states and suppression of drift phenomena in arsenic-stabilized metal-insulator-InP structures
- 15 April 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (8) , 761-763
- https://doi.org/10.1063/1.95500
Abstract
A significant improvement of the electronical properties of metal‐Al2O3‐InP structures is obtained after treating InP substrates at 500 °C in an As overpressure (10−6 Torr). The density of fast interface states near the conduction‐band edge is markedly reduced and drift phenomena are greatly suppressed, as compared to results obtained with chemically etched reference substrates. An interpretation of these effects is given based on the compensation of phosphorus vacancies by As atoms more strongly attached to the InP surface than P atoms.Keywords
This publication has 10 references indexed in Scilit:
- Interfacial constraints on device performanceJournal of Vacuum Science & Technology B, 1984
- Interface properties of Al–SiO2–In0.53Ga0.47As MIS devicesJournal of Vacuum Science & Technology B, 1984
- High mobility insulated gate transistors on InPJournal of Vacuum Science & Technology B, 1984
- Processing of InP MIS devices monitored via photoluminescence measurementsElectronics Letters, 1984
- Electrical properties of Al2O3 and AlPxOy dielectric layers on InPThin Solid Films, 1984
- Chemical deposition of PAsxNy films onto III–V compound semiconductorsThin Solid Films, 1983
- Metal-insulator-semiconductor diodes fabricated on InP, InGaAsP, and InGaAsJournal of Applied Physics, 1982
- Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In-Ga ovenJournal of Applied Physics, 1981
- Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxyApplied Physics Letters, 1980
- n -channel inversion-mode InP m.i.s.f.e.t.Electronics Letters, 1978