Temperature dependence of hydrogen vibrational modes in passivated boron-doped silicon
- 2 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (18) , 1413-1415
- https://doi.org/10.1063/1.98641
Abstract
Vibrational spectra of hydrogen and deuterium in the passivated layer of bulk boron doped crystalline silicon are investigated by Raman scattering. The temperature dependence of line positions and widths is measured in the range 5–450 K and for H(D) concentrations between 1×1019 and 1×1020 cm−3. A strong correlation between shift and broadening of the Raman lines is observed for all samples.Keywords
This publication has 12 references indexed in Scilit:
- Vibrational characteristics of acceptor-hydrogen complexes in siliconApplied Physics Letters, 1987
- Hydrogen passivation of boron acceptors in silicon: Raman studiesPhysical Review B, 1987
- Assali and Leite respondPhysical Review Letters, 1986
- The isotope study of the SiH absorption peaks in the FZSi grown in hydrogen atmosphereSolid State Communications, 1985
- Localized vibrational mode infrared absorption of BH pair in siliconSolid State Communications, 1985
- Microscopic Mechanism of Hydrogen Passivation of Acceptor Shallow Levels in SiliconPhysical Review Letters, 1985
- Hydrogen-acceptor pairs in silicon: Pairing effect on the hydrogen vibrational frequencyPhysical Review B, 1985
- Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal siliconPhysical Review B, 1985
- Hydrogen localization near boron in siliconApplied Physics Letters, 1985
- Interstitial muons and hydrogen in diamond and siliconJournal of Physics C: Solid State Physics, 1984