The isotope study of the SiH absorption peaks in the FZSi grown in hydrogen atmosphere
- 31 October 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 56 (3) , 277-281
- https://doi.org/10.1016/0038-1098(85)91010-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Models for the Hydrogen-Related Defect—Impurity Complexes and Si-H Infrared Bands in Crystalline SiliconPhysica Status Solidi (a), 1982
- On the identification of the vibrational spectra in hydrogen implanted crystalline siliconPhysics Letters A, 1982
- THE PRESENCE OF Si-H BONDS IN Si SINGLE CRYSTALS AND ITS INFLUENCESActa Physica Sinica, 1979
- Infrared absorption of silicon irradiated by protonsPhysica Status Solidi (b), 1978
- Vibrational and Electronic Structure of Hydrogen‐Related Defects in Silicon Calculated by the Extended Hückel TheoryPhysica Status Solidi (b), 1977
- Bonding and thermal stability of implanted hydrogen in siliconJournal of Electronic Materials, 1975