On the identification of the vibrational spectra in hydrogen implanted crystalline silicon
- 25 January 1982
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 87 (7) , 376-380
- https://doi.org/10.1016/0375-9601(82)90849-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Divacancy in silicon irradiated by protonsPhysica Status Solidi (b), 1979
- Vacancies and the Chemical Trapping of Hydrogen in SiliconPhysical Review Letters, 1979
- New infra-red absorption bands in hydrogen-implanted siliconPhysics Letters A, 1979
- Infrared absorption of silicon irradiated by protonsPhysica Status Solidi (b), 1978
- Structure of hydrogen center in D-implanted SiPhysical Review B, 1978
- Semi-empirical calculations of hydrogen defects in siliconPhysics Letters A, 1978
- Vibrational and Electronic Structure of Hydrogen‐Related Defects in Silicon Calculated by the Extended Hückel TheoryPhysica Status Solidi (b), 1977
- Bonding and thermal stability of implanted hydrogen in siliconJournal of Electronic Materials, 1975
- EPR evidence of the self-interstitials in neutron-irradiated siliconSolid State Communications, 1974