Structural and electrical properties of ferroelectric bismuth titanate thin films prepared by the sol gel method
- 1 January 1996
- journal article
- Published by Elsevier in Ceramics International
- Vol. 22 (3) , 241-247
- https://doi.org/10.1016/0272-8842(95)00098-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Control of Leakage Resistance in Pb(Zr,Ti)O3 Thin Films by Donor DopingJournal of the American Ceramic Society, 1994
- Synthesis and Characterization of Bi4Ti3O12 Thin Films by Sol-Gel ProcessingJapanese Journal of Applied Physics, 1993
- Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor depositionJournal of Applied Physics, 1993
- Excimer laser ablated barium strontium titanate thin films for dynamic random access memory applicationsApplied Physics Letters, 1993
- Formation and Properties of Ferroelectric Bi4Ti3O12 Films by the Sol-Gel ProcessJapanese Journal of Applied Physics, 1992
- Excimer laser-ablated bismuth titanate thin filmsApplied Physics Letters, 1992
- Structural and optical properties of ferroelectric Bi4Ti3O12 thin films by sol-gel techniqueApplied Physics Letters, 1991
- Epitaxial Cuprate Superconductor/Ferroelectric HeterostructuresScience, 1991
- Pulsed laser deposition and ferroelectric characterization of bismuth titanate filmsApplied Physics Letters, 1991