Excimer laser-ablated bismuth titanate thin films
- 10 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (6) , 781-783
- https://doi.org/10.1063/1.106518
Abstract
Bismuth titanate thin films were deposited by the excimer laser ablation technique. Process parameters such as substrate temperature, laser fluence, and gas pressure were investigated and correlated to the resulting film properties. Results suggest an intrinsic bombardment effect on the growing film. The permittivity and dissipation factor measured at 100 kHz were 150 and 0.01, respectively. The ferroelectric properties exhibited a dependence on film orientation and films with preferred c-axis orientation yielded fully saturated hysteresis loops with Pr=7 μC/cm2 and Ec=20 kV/cm.Keywords
This publication has 13 references indexed in Scilit:
- Pulsed laser deposition of stoichiometric potassium-tantalate-niobate films from segmented evaporation targetsApplied Physics Letters, 1991
- Excimer laser ablated lead zirconate titanate thin filmsJournal of Applied Physics, 1991
- Pulsed laser deposition and ferroelectric characterization of bismuth titanate filmsApplied Physics Letters, 1991
- Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser depositionApplied Physics Letters, 1990
- Preparation of Pb(Zn0.52Ti0.48)O3 Films by Laser AblationJapanese Journal of Applied Physics, 1990
- Lead Zirconate Titanate Films Produced by Pulsed Laser DepositionMRS Proceedings, 1990
- Ferroelectric MemoriesScience, 1989
- Epitaxial growth of thin films of BaTiO3 using excimer laser ablationApplied Physics Letters, 1989
- Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high T c bulk materialApplied Physics Letters, 1987
- CRYSTAL SYMMETRY, OPTICAL PROPERTIES, AND FERROELECTRIC POLARIZATION OF Bi4Ti3O12 SINGLE CRYSTALSApplied Physics Letters, 1967