Comments on the distinction between ``striations'' and ``swirls'' in silicon
- 1 July 1974
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (1) , 69-71
- https://doi.org/10.1063/1.1655283
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Oxidation-induced stacking faults in silicon. I. Nucleation phenomenonJournal of Applied Physics, 1974
- Oxidation-induced stacking faults in silicon. II. Electrical effects in P N diodesJournal of Applied Physics, 1974
- Electrical effect of growth striations in the silicon vidicon-type camera tubesApplied Physics Letters, 1973
- Diffraction contrast analysis of two-dimensional defects present in silicon after annealingPhilosophical Magazine, 1966
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963