Anatomy of the transferred-electron effect in III-V semiconductors
- 1 February 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (2) , 754-764
- https://doi.org/10.1063/1.323666
Abstract
The roles played by band structure, ionicity, and phonon energies in the transferred-electron (TE) effect in III-V compound semiconductors at 300 K are analyzed within a simple transport model. Expressions are obtained for the threshold field, the peak velocity, the frequency limit, the valley velocity, the breakdown field, and the relative noise level. These exhibit a powerful dependence on the magnitudes of relevant phonon energies and also on ionicity. The dependence on individual band structures is relatively weak. A figure of merit for TE materials is suggested, on which basis InP emerges as over three times better than GaAs.This publication has 28 references indexed in Scilit:
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