Properties of polysilicon films annealed by a rapid thermal annealing process
- 1 November 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 220 (1-2) , 106-110
- https://doi.org/10.1016/0040-6090(92)90556-q
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Stress in undoped LPCVD polycrystalline siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An integrated air-gap-capacitor process for sensor applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Control of residual stress of polysilicon thin films by heavy doping in surface micromachiningPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Silicon-microactuators: activation mechanisms and scaling problemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Investigations on free-standing polysilicon beams in view of their application as transducersSensors and Actuators A: Physical, 1990
- Electrostatic-comb drive of lateral polysilicon resonatorsSensors and Actuators A: Physical, 1990
- Process Integration for active polysilicon resonant microstructuresSensors and Actuators, 1989