ZnSe epitaxial growth by the temperature difference method under controlled vapor pressure (TDM-CVP) using Se solvent
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 112 (1) , 153-159
- https://doi.org/10.1016/0022-0248(91)90920-z
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Theoretical study of hole transport in ZnSeJournal of Applied Physics, 1986
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressureJournal of Crystal Growth, 1975
- Nonstoichiometry of Te-Doped GaAsJapanese Journal of Applied Physics, 1974
- Properties of Sn-doped GaAsJournal of Applied Physics, 1973
- Synthesis and growth of ZnS, ZnSe, ZnTe, GaS, Ga2Se3 and InS crystals in Ga and in meltsMaterials Research Bulletin, 1968
- Solution growth of some II–VI compounds using tin as a solventJournal of Crystal Growth, 1968
- Solubility of ZnSe and ZnTe in Ga and InJournal of Physics and Chemistry of Solids, 1966
- Solubilities of Some II–VI Compounds in BismuthJournal of the Electrochemical Society, 1966
- The growth of semiconductor crystals from solution using the twin-plane reentrant-edge mechanismJournal of Physics and Chemistry of Solids, 1964