Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 215-222
- https://doi.org/10.1016/0022-0248(75)90134-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Heat treatment of gallium phosphideSolid State Communications, 1974
- Nonstoichiometry of Te-Doped GaAsJapanese Journal of Applied Physics, 1974
- Properties of Sn-doped GaAsJournal of Applied Physics, 1973
- Annealing of N-Type GaAs under Excess Arsenic VaporJapanese Journal of Applied Physics, 1969