Ion beam annealing during high current density implants of phosphorus into silicon

Abstract
The damage left by high current density∼10 μA/cm2 implants of 120-keV P+ into 4-in. (500-μm-thick) and 5-in. (600-μm-thick) Si wafers of 〈100〉 orientation has been measured by 2.0-MeV He backscattering in combination with the channeling effect technique. The fluences ranged between 1 and 7.5×1015/cm2. The amount of disorder is highest at 1×1015/cm2 and then decreases with fluence. The annealing of the amorphous layer takes place by the movement of two and one amorphous–single crystal interfaces for the 500- and 600-μm-thick wafers, respectively. The experimental data are compared with a beam annealing model based on the temperature-rise profile, the amount of point defects generated by the ion in the collision cascade volume, and the assumption of a regrowth process governed by an activation energy of 0.25 eV.

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