Scanning tunneling microscopy of crystal dislocations in gallium arsenide
- 14 May 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (20) , 2402-2405
- https://doi.org/10.1103/physrevlett.64.2402
Abstract
Dislocations in GaAs induced by plastic deformation have been studied by scanning tunneling microscopy. Atomically resolved images of perfect and partial dislocations penetrating the cleaved {110} surface were obtained. A Burgers-vector analysis of the observed dislocations was performed. During observation the dislocations were found to be mobile over nm distances. No band bending was observed around the dislocation cores indicating that they are essentially electrically neutral.Keywords
This publication has 14 references indexed in Scilit:
- Determination of atom positions at stacking-fault dislocations on Au(111) by scanning tunneling microscopyPhysical Review B, 1989
- Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopyPhysical Review B, 1989
- Atomically resolved scanning tunneling microscopy images of dislocationsPhysical Review B, 1988
- Characterization of localized atomic surface defects by tunneling microscopy and spectroscopyJournal of Vacuum Science & Technology B, 1988
- Reconstruction of steps on the Si(111)2×1 surfacePhysical Review Letters, 1987
- Tunneling images of biatomic steps on Si(001)Physical Review Letters, 1987
- Atom-selective imaging of the GaAs(110) surfacePhysical Review Letters, 1987
- An easily operable scanning tunneling microscopeSurface Science, 1987
- Surface morphology of GaAs(110) by scanning tunneling microscopyPhysical Review B, 1985
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983