Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation

1 November 1996

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 17 (11) , 518-520
https://doi.org/10.1109/55.541767

Abstract

Chemical-mechanical polishing and hydrogen passivation were jointly used to improve the electrical characteristics of polycrystalline-Si thin-film transistors (poly-Si TFT's). It was found that each treatment affects the devices differently; polishing is more effective in smoothing the poly-Si/SiO/sub 2/ interface while hydrogenation is more effective in passivating the grain boundaries. Their effects are additive. Hence, optimal device performance was achieved by combining both treatments.

Keywords

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