Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes
- 1 May 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 59 (1-3) , 211-217
- https://doi.org/10.1016/s0921-5107(98)00393-6
Abstract
No abstract availableKeywords
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