Modification of optical properties by strain-induced piezoelectric effects in ultrahigh-quality V-groove AlGaAs/GaAs single quantum wire

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Abstract
We report tiny strain-induced piezoelectric effects in an ultrahigh-quality AlGaAs/GaAs V-groove quantum wire structure. Zero photoluminescence excitation (PLE) absorption intensities are observed at low temperatures. Excitation power density-dependent optical properties provide evidence that the zero PLE absorption intensities are due to an internal electric field created by tiny strain-induced piezoelectric polarization along the wires, which causes complete spatial separation of the electron and hole wave functions along the wires. Absorption is enhanced by shining a He–Ne laser as a background in order to screen the electric field, which confirms the existence of piezoelectric field effects