Improved heterointerface quality of V-shaped AlGaAs/GaAs quantum wires characterized by atomic force microscopy and micro-photoluminescence
- 2 May 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 213 (1-2) , 19-26
- https://doi.org/10.1016/s0022-0248(00)00301-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Self-limiting effects of flow rate modulation epitaxy of GaAs on patterned substrateJournal of Crystal Growth, 1998
- Quantum-size effects on radiative lifetimes and relaxation of excitons in semiconductor nanostructuresPhysical Review B, 1998
- Surface and interface properties of quantum nanostructures grown on nonplanar substratesApplied Surface Science, 1998
- High spatial resolution spectroscopy of a single V-shaped quantum wireApplied Physics Letters, 1997
- Large excited state Stokes shift in crescent-shaped AlGaAs/GaAs quantum wiresApplied Physics Letters, 1997
- Self-limiting growth of GaAs surfaces on nonplanar substratesApplied Physics Letters, 1997
- Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrateApplied Physics Letters, 1995
- Direct growth of (AlGa)As/GaAs quantum wires by metalorganic vapour phase epitaxyJournal of Crystal Growth, 1993
- Topography of high- and low-index GaAs surfacesPhysical Review B, 1992
- Characteristics of molecular-beam epitaxially grown pair-groove-substrate GaAs/AlGaAs multiquantum-well lasersJournal of Applied Physics, 1987