Amorphouslike Density of Gap States in Single-Crystal Pentacene
- 19 August 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 93 (8) , 086802
- https://doi.org/10.1103/physrevlett.93.086802
Abstract
We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the highest occupied molecular orbital–lowest unoccupied molecular orbital band gap. It is found that these highly purified crystals possess band tails broader than those typically observed in inorganic amorphous solids. Results on field-effect transistors fabricated from similar crystals imply that the gap state density is much larger within 5–10 nm of the gate dielectric. Thus, organic thin-film transistors for such applications as flexible displays might be significantly improved by reducing these defects.Keywords
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This publication has 18 references indexed in Scilit:
- Bias-Dependent Generation and Quenching of Defects in PentacenePhysical Review Letters, 2004
- Gap states in organic semiconductors: Hydrogen- and oxygen-induced states in pentacenePhysical Review B, 2003
- Ab initiocalculation of the electronic and optical properties of solid pentacenePhysical Review B, 2003
- Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric propertiesApplied Physics Letters, 2003
- Carrier transport and density of state distributions in pentacene transistorsPhysical Review B, 2002
- Exciton dynamics in pentacene thin films studied by pump-probe spectroscopyChemical Physics Letters, 1995
- Recombination-Enhanced Reactions in SemiconductorsAnnual Review of Materials Science, 1982
- Structural Disorder as a Source of Traps for Current Carriers in Organic Molecular CrystalsMolecular Crystals and Liquid Crystals, 1976
- Photoelectrical properties, energy level spectra, and photogeneration mechanisms of pentacenePhysica Status Solidi (a), 1974
- Destruction of Triplet Excitons in Anthracene by Injected ElectronsPhysical Review Letters, 1966