Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric properties
- 22 January 2003
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (4) , 639-641
- https://doi.org/10.1063/1.1540243
Abstract
We have fabricated p-pentacene/n-Si organic photodiodes by thermal evaporation of pentacene films at 25 (RT), 60, and 80 °C. Our pentacene films exhibit the main absorption peak (highest occupied molecular orbital-lowest unoccupied molecular orbital gap transition) at 1.82 eV and photoelectric effects were clearly observed from our p-pentacene/n-Si diodes when illuminated by a monochromatic red light of 1.85 eV (670 nm). Excellent photoresponsivity of 2.6 A/W and the photoresponse time of less than 40 ns have been demonstrated. The photodiodes exhibited typical rectifying behavior in the dark and the leakage current increases with the deposition temperature.Keywords
This publication has 9 references indexed in Scilit:
- Optical and luminescence characteristics of thermally evaporated pentacene films on SiApplied Physics Letters, 2002
- Low-temperature transport in high-mobility polycrystalline pentacene field-effect transistorsPhysical Review B, 2001
- Modeling of organic thin film transistors of different designsJournal of Applied Physics, 2000
- A reduced complexity process for organic thin film transistorsApplied Physics Letters, 2000
- Ambipolar Pentacene Field-Effect Transistors and InvertersScience, 2000
- Pentacene organic thin-film transistors for circuit and display applicationsIEEE Transactions on Electron Devices, 1999
- Fast organic thin-film transistor circuitsIEEE Electron Device Letters, 1999
- Temperature-independent transport in high-mobility pentacene transistorsApplied Physics Letters, 1998
- Molecular beam deposited thin films of pentacene for organic field effect transistor applicationsJournal of Applied Physics, 1996