Modeling of organic thin film transistors of different designs
- 1 December 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (11) , 6594-6597
- https://doi.org/10.1063/1.1323534
Abstract
We report on modeling of direct current (DC) characteristics of organic pentacene thin film transistors of different designs. Our model incorporates a gate-voltage dependent mobility and highly nonlinear drain and source contact series resistances. The contact nonlinearities are especially pronounced in bottom source and drain contact thin film transistors. The model successfully reproduced both below- and above-threshold characteristics of top source and drain contact and bottom source and drain contact organic pentacene thin film transistors.This publication has 5 references indexed in Scilit:
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