Variation of strain/defects in H+-implanted single crystal silicon
- 1 September 2000
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 170 (1-2) , 98-104
- https://doi.org/10.1016/s0168-583x(00)00170-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- On the mechanism of the hydrogen-induced exfoliation of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Silicon on insulator material technologyElectronics Letters, 1995
- Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal siliconPhysical Review B, 1992
- Platelet defects in hydrogen implanted siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Hydrogen plasma induced defects in siliconApplied Physics Letters, 1988
- Defects in single-crystal silicon induced by hydrogenationPhysical Review B, 1987