Use of a rapid anneal to improve CaF2:Si (100) epitaxy
- 15 May 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (10) , 947-949
- https://doi.org/10.1063/1.95830
Abstract
Post-anneals of short duration at high temperature are shown to improve significantly the quality of CaF2 films on Si (100). An anneal at 1100 °C for 20 s in an Ar ambient reduced χmin, the ratio of backscattered 1.8-MeV 4He+ ions in the aligned to random direction, from 0.26 for an as-grown CaF2 film to 0.03 following the post-anneal. This is the best χmin yet reported for the CaF2:Si (100) system. The post-anneal films also show improved chemical, mechanical, and electrical properties.Keywords
This publication has 1 reference indexed in Scilit:
- Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and SiApplied Physics Letters, 1982