Crystal structure and band gap of AlGaAsN
- 30 September 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (9) , 901-906
- https://doi.org/10.1016/0038-1101(87)90125-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputersIEEE Transactions on Electron Devices, 1984
- On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperaturesIEEE Transactions on Electron Devices, 1984
- Growth of III–V semiconductors by molecular beam epitaxy and their propertiesThin Solid Films, 1983
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- High-performance GaAs metal insulator semiconductor transistorIEEE Electron Device Letters, 1982
- LSI processing technology for planar GaAs integrated circuitsIEEE Transactions on Electron Devices, 1980
- Compound SemiconductorsJournal of the Electrochemical Society, 1978
- Perspectives on III–V compound MIS structuresJournal of Vacuum Science and Technology, 1978
- MOS processing for III–V compound semiconductors: Overview and bibliographyThin Solid Films, 1977
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969