Microwave potential of GaN-based Gunn devices
- 20 January 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (2) , 176-178
- https://doi.org/10.1049/el:20000200
Abstract
Transient hydrodynamic simulations are used to carry out harmonic power analysis of GaN and GaAs Gunn diode oscillators. GaN-based devices are shown to have twice the frequency and a hundred times the power capability of GaAs Gunn diodes.Keywords
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