Stress-induced low-level leakage mechanism in ultrathin silicon dioxide films caused by neutral oxide trap generation
- 1 January 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Stress-induced low-level leakage current in ultrathin silicon dioxide films is correlated with neutral oxide trap generation based on first-order kinetics. The conduction mechanism is explained by Fowler-Nordheim tunneling from the leakage spot, generated at the cathode interface, to the neutral oxide trap level, lower in energy than the SiO/sub 2/ barrier height.<>Keywords
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