Stress-induced oxide leakage
- 1 November 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (11) , 632-634
- https://doi.org/10.1109/55.119221
Abstract
Voltage-stress-induced leakage in 5-nm thermal oxides was studied. A correlation between the leakage current and the charge-pumping current was evident in a series of voltage stress, annealing, and restress tests. The close correlation suggests that the leakage may be a result of the oxide-trap assisted tunneling. Data supporting a model involving trap states are presented.Keywords
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